Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors
| dc.contributor.author | KAYA, Ş.; YILMAZ, E. ; ÇETİNKAYA, A.O. | |
| dc.date.accessioned | 2019-04-24T13:23:36Z | |
| dc.date.available | 2019-04-24T13:23:36Z | |
| dc.description.abstract | The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator– semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures. | |
| dc.identifier.endpage | 052 | tr_TR |
| dc.identifier.issn | 2147-7736 | |
| dc.identifier.startpage | 048 | tr_TR |
| dc.identifier.uri | http://hdl.handle.net/20.500.12575/63381 | |
| dc.identifier.uri | https://doi.org/10.1501/nuclear_0000000012 | |
| dc.relation | Ankara University Institute of Nuclear Sciences | tr_TR |
| dc.relation.journal | Journal of Nuclear Sciences | tr_TR |
| dc.title | Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors | tr_TR |