KAYA, Ş.; YILMAZ, E. ; ÇETİNKAYA, A.O.2019-04-242019-04-242147-7736http://hdl.handle.net/20.500.12575/63381https://doi.org/10.1501/nuclear_0000000012The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator– semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.048052